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1

A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology

Hiroki Okamoto, Nobuaki Yasutake, Naoki Kusunoki, Kanna Adachi, Hiroshi Itokawa, Kiyotaka Miyano, Tatsuya Ishida, Akira Hokazono, Shigeru Kawanaka, Ichiro Mizushima, Atsushi Azuma, Yoshiaki Toyoshima

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 651 KB

english, 2009

2

Corrosion of copper and silver plates by volcanic gases

Masamitsu Watanabe, Akira Hokazono, Takao Handa, Toshihiro Ichino, Nobuo Kuwaki

Journal:

Corrosion Science

Year:

2006

Language:

english

File:

PDF, 580 KB

english, 2006

3

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Direct liquid cooling module with high reliability solder joining technology for automotive applications

Morozumi, Akira, Hokazono, Hiroaki, Nishimura, Yoshitaka, Ikeda, Yoshinari, Nabetani, Yoichi, Takahashi, Yoshikazu

Year:

2013

Language:

english

File:

PDF, 833 KB

english, 2013

4

[IEEE 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2007.04.23-2007.04.25)] 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Advanced CMOS Technology beyond 45nm Node

Kawanaka, Shigeru, Hokazono, Akira, Yasutake, Nobuaki, Tatsumura, Kosuke, Koyama, Masato, Toyoshima, Yoshiaki

Year:

2007

Language:

english

File:

PDF, 4.56 MB

english, 2007

5

Influence of Cooling Rates on Reliability of Solder Joints Using Sn–13wt.% Sb Binary Alloy for Power Semiconductor Modules

Morozumi, Akira, Hokazono, Hiroaki, Nishimura, Yoshitaka, Mochizuki, Eiji, Takahashi, Yoshikazu

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Year:

2016

Language:

english

File:

PDF, 3.26 MB

english, 2016

6

Dynamical structure of superionic conductors

Mitsuhiko Hokazono, Akira Ueda, Yasuaki Hiwatari

Journal:

Solid State Ionics

Year:

1984

Language:

english

File:

PDF, 301 KB

english, 1984

7

Evaluation of two-dimensional strain distribution by STEM/NBD

Fumihiko Uesugi, Akira Hokazono, Shiro Takeno

Journal:

Ultramicroscopy

Year:

2011

Language:

english

File:

PDF, 430 KB

english, 2011

8

Development of an assay of seven biochemical items, HbA1c, and hematocrit using a small amount of blood collected from the fingertip

Sugimoto Shinya, Akimoto Masaru, Hayakawa Akira, Hokazono Eisaku, Osawa Susumu

Journal:

Clinica Chimica Acta

Year:

2012

Language:

english

File:

PDF, 272 KB

english, 2012

9

Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation

Miyano, Kiyotaka, Mizushima, Ichiro, Ohuchi, Kazuya, Hokazono, Akira, Tsunashima, Yoshitaka

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 1.89 MB

english, 1999

10

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Insight into the S/D engineering by high-resolution imaging and precise probing of 2D-carrier profiles with scanning spreading resistance microscopy

Zhang, Li, Saitoh, Masumi, Kinoshita, Atsuhiro, Yasutake, Nobuaki, Hokazono, Akira, Aoki, Nobutoshi, Kusunoki, Naoki, Mizushima, Ichiro, Koike, Mitsuo, Takeno, Shiro, Koga, Junji

Year:

2009

Language:

english

File:

PDF, 1019 KB

english, 2009

11

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - CMOS Devices - Advanced Device Structures

Chang, Chih-Sheng, Hokazono, Akira

Year:

2007

Language:

english

File:

PDF, 47 KB

english, 2007

12

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique

Yoshifumi Nishi,, Yoshinori Tsuchiya,, Atsuhiro Kinoshita,, Akira Hokazono,, Junji Koga,

Year:

2008

Language:

english

File:

PDF, 315 KB

english, 2008

13

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼

Takeshi Sonehara,, Akira Hokazono,, Haruko Akutsu,, Tomokazu Sasaki,, Hiroshi Uchida,, Mitsuhiro Tomita,, Hideji Tsujii,, Shigeru Kawanaka,, Satoshi Inaba,, Yoshiaki Toyoshima,

Year:

2008

Language:

english

File:

PDF, 1.20 MB

english, 2008

14

[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS

Nishi, Yoshifumi, Sonehara, Takeshi, Hokazono, Akira, Kawanaka, Shigeru, Inaba, Satoshi, Kinoshita, Atsuhiro

Year:

2010

Language:

english

File:

PDF, 580 KB

english, 2010

15

Destruction behavior of carbon hybridized Li2MnSiO4 and Li2FeSiO4 nanoparticles for cathode materials

Sasaki, Hirokazu, Nemoto, Atsushi, Moriya, Maki, Miyahara, Masahiko, Hokazono, Mana, Katayama, Shingo, Akimoto, Yuji, Nakajima, Akira, Hirano, Shin-ichi

Journal:

Ceramics International

Year:

2015

Language:

english

File:

PDF, 10.93 MB

english, 2015

16

In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

Okamoto, Hiroki, Hokazono, Akira, Adachi, Kanna, Yasutake, Nobuaki, Itokawa, Hiroshi, Okamoto, Shintaro, Kondo, Masaki, Tsujii, Hideji, Ishida, Tatsuya, Aoki, Nobutoshi, Fujiwara, Makoto, Kawanaka, Sh

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 248 KB

english, 2008

17

Implementation of TFET SPICE Model for Ultra-low Power Circuit Analysis

Tanaka, Chika, Adachi, Kanna, Fujimatsu, Motohiko, Kondo, Yoshiyuki, Hokazono, Akira, Kawanaka, Shigeru

Journal:

IEEE Journal of the Electron Devices Society

Year:

2016

Language:

english

File:

PDF, 483 KB

english, 2016

18

[IEEE 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Wien, Vienna, Austria (2016.1.25-2016.1.27)] 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Investigation of BSIM4 parameter extraction and characterization for Multi Gate Oxide-Dual Work Function (MGO-DWF)-MOSFET

Tanaka, Chika, Matsuzawa, Kazuya, Miyata, Toshitaka, Adachi, Kanna, Hokazono, Akira

Year:

2016

Language:

english

File:

PDF, 1.42 MB

english, 2016

19

S/D Engineering for Sub-100 nm MOSFET using Ultra Shallow Junction Formation Technique, Elevated S/D Structure and SALICIDE Technique

Ohuchi, Kazuya, Adachi, Kanna, Hokazono, Akira, Toyoshima, Yoshiaki

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 307 KB

english, 2002

20

[IEEE 2016 International Conference on Electronics Packaging (ICEP) - Hokkaido, Japan (2016.4.20-2016.4.22)] 2016 International Conference on Electronics Packaging (ICEP) - Higher thermal cycling reliability of power semiconductor module for power converters

Morozumi, Akira, Hokazono, H., Nishimura, Yoshitaka, Kariya, Yoshiharu, Mochizuki, Eiji, Takahashi, Yoshikazu

Year:

2016

Language:

english

File:

PDF, 1.16 MB

english, 2016

21

Redox Behavior of Fe(II)- N , N , N ′, N ′-tetrakis(2-pyridylmethyl)- trans -1,2-cyclohexanediamine Complex as a Superoxide Dismutase-Like Mimic

Nakagawa, Munenori, Hanaoka, Kazunori, Terasaki, Akira, Mori, Yutaka, Hokazono, Hidenori, Sato, Masaru, Iida, Takeaki

Journal:

Chemistry Letters

Year:

1994

File:

PDF, 413 KB

1994

22

In-situ monitoring of ion-beam luminescence of Si–O–C(–H) ceramics under proton-beam irradiation

NARISAWA, Masaki, KOKA, Masashi, TAKEYAMA, Akinori, SUGIMOTO, Masaki, IDESAKI, Akira, SATOH, Takahiro, HOKAZONO, Hiroki, KAWAI, Taketoshi, IWASE, Akihiro

Journal:

Journal of the Ceramic Society of Japan

Year:

2015

Language:

english

File:

PDF, 1.82 MB

english, 2015